Silicon's total density of states, computed with Elk alone -- a type 1, independent calculation with the QELK suite (no Quantum ESPRESSO involved here; for the direct Elk-vs-QE overlay, see the Si_tdos_elk_vs_qe example).
The input file
We need only the input file
Si_tdos_elk.qelk
version 1 cell bohr -5.1 0.0 5.1 0.0 5.1 5.1 -5.1 5.1 0.0 end atoms crystal Si 0.00 0.00 0.00 Si 0.25 0.25 0.25 end species Si elk_file Si.in qe_pseudo Si.pz-vbc.UPF qe_mass 28.086 end step dos elk from initial task 0 10 rgkmax 7.0 ngridk 8 8 8 xctype 2 end
Note: task 0 10 is a LIST, both in the SAME step -- not two separate steps. Elk's task 10 (DOS) does not run its own SCF; it reads a converged STATE.OUT written by a prior task 0 in the same Elk invocation. Since qelk gives every step its own clean directory, splitting these into two qelk steps would leave task 10 with no density to read -- the same reasoning as the band-structure example. xctype 2 (LDA) matches Si.pz-vbc.UPF's functional.
Calculation
algerien1970@linux-ml0a:~/abinitio/QELK/examples/Si_dos_elk> qelk Si_dos_elk.qelk
Elk runs task 0 then task 10 in one invocation. From dos.elk.stdout:
Info(elk): current task : 0 Info(checkmt): reduced muffin-tin radius of species 1 (Si) from 2.2000 to 2.1834 Info(elk): current task : 10 Info(writedos): Total density of states written to TDOS.OUT ... Fermi energy is at zero in plot DOS units are states/Hartree/unit cell
Every step's files land in run/NN_<step>/, and the important ones are also copied next to the .qelk file, prefixed with the step id: dos.TDOS.OUT, dos.INFO.OUT, dos.TOTENERGY.OUT, dos.elk.stdout.
SCF result
grep -A1 "Convergence targets achieved" dos.INFO.OUT grep " total energy" dos.INFO.OUT | tail -1 grep " Fermi " dos.INFO.OUT | tail -1 grep "Estimated" dos.INFO.OUT | tail -2
Convergence targets achieved total energy : -578.076938663 (Hartree) Fermi : 0.213191193976 (Hartree) Estimated indirect band gap : 0.1806684094E-01 (from k-point 1 to k-point 18) Estimated direct band gap : 0.9362392480E-01 (at k-point 1)
Converged in 19 SCF iterations on the 8x8x8 mesh (29 irreducible k-points after symmetry reduction), matching the exact ground state Si_band_elk and Si_band_dos_elk already established for this cell.
Plot
plot_elk_dos.py dos.TDOS.OUT -o elk_dos.png
Note: Elk writes TDOS.OUT energies already relative to the Fermi level, so 0 eV on the plot below IS the Fermi level -- don't pass --efermi here, exactly the same caveat as Si_band_elk.
Analysis
Reading dos.TDOS.OUT directly (500 points, energies converted Hartree -> eV, DOS in states/eV):
Window : -13.61 eV to +13.55 eV -- Elk's own default DOS window
(roughly +-13.6 eV around E_Fermi), the same default
the Si_band_dos_elk tutorial's TDOS.OUT already showed.
Gap : DOS is essentially zero from about -0.11 to +0.16 eV
around E_Fermi, with a faint thermal tail extending a
little further either side -- expected, since this run
uses Fermi-Dirac smearing (width 0.001 Hartree, an
effective electronic temperature of ~316 K), not a
hard cutoff.
Valence peaks : -9.96 eV (0.93 states/eV) -- the single, narrow 3s-
derived bonding band Si_band_elk found flat and
isolated along L-G-X-W-G.
-6.91, -4.30, -3.97, -2.99, -2.29, -1.69 eV (1.1-1.7
states/eV) -- the p-derived valence manifold, matching
the -7 to 0 eV range Si_band_elk's band structure
already mapped out; DOS shows more structure here than
that single band-path cut did, because it sums the
heavy-hole/light-hole splitting over the WHOLE
Brillouin zone, not just one path through it.
Conduction : 2.07, 2.29, 3.37 eV (2.20, 2.37, 2.90 states/eV) -- the
peaks tallest feature in the whole curve, then 5.12, 7.02,
9.69-10.99, 13.06 eV (1.5-1.75 states/eV) further up,
broadening as expected for increasingly free-electron-
like conduction states away from the gap.
Note: the gap this DOS shows (roughly a few tenths of an eV wide on the raw grid) lines up with Elk's own internal estimate from this same SCF run -- indirect band gap 0.01806684 Hartree = 0.4916 eV -- MUCH closer to the usual quoted LDA silicon gap (0.5-0.6 eV) than the ~2.3 eV read directly off Si_band_elk's plot. The difference is entirely down to sampling: Si_band_elk's estimate came from a band structure plotted along a handful of high-symmetry lines, which can miss the true conduction-band minimum sitting off those lines; Elk's own gap estimator here scans every eigenvalue at all 29 irreducible k-points of the SCF mesh and finds the true minimum (k-point 1 to k-point 18), which is exactly the kind of check the band-structure tutorial's own notes flagged as needed. The direct gap at k-point 1 is 0.09362 Hartree = 2.548 eV -- k-point 1 is the zone-centre G point for this zero-offset mesh.
Note: sanity check: integrating dos.TDOS.OUT up to E_Fermi (0 eV) gives exactly 8.000 states per cell -- 2 Si atoms x 4 valence electrons (3s²3p²), confirming the DOS is internally consistent with the valence electron count Si_band_elk already verified band-by-band. The DOS AT E_Fermi itself is 0.00404 states/Hartree/cell (about 1.5x10-4 states/eV) -- vanishingly small, as expected for a semiconductor, and nonzero only because of the finite-temperature smearing rather than any real states in the gap.
This is the DOS counterpart of Si_band_elk: same cell, same functional, same converged ground state (-578.077 Hartree total energy, E_Fermi = 5.801 eV) -- just integrated over the whole Brillouin zone instead of sampled along one path, which is why the same bonding/valence/gap story shows up in both, in slightly different clothing, and why this run's own internal gap estimate is the more trustworthy one of the two.

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